New approach to flexible thin-film transistors

Thin Film Transistors & Flexible Displays

Towards flexible organic thin film transistors (OTFTs) for biosensing

We have studied parylene-N and parylene-C for their use as substrates and gate dielectrics in OTFTs. Parylene-N films with a thickness of 300 nm show the required dielectric properties, as verified by breakthrough-voltage measurements. The surface roughness measured for 300 nm thick parylene-N films is 4–5 nm. However, initial growth of parylene depends on the subjacent surface. This results in...

Modeling and Simulation of Flexible Oxide Thin Film Transistors

Electrical characteristic of amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) on flexible substrate are investigated with various channel width and length. Its electrical properties according to the physical dimension of the channel are analyzed through Technology Computer-Aided Design (TCAD) simulation. Index Terms — Density of states (DOS), flexible, In-GaZn-O (IGZO),...

Low Temperature Polysilicon Thin-Film Transistors on Flexible Substrates

We fabricated low-temperature polycrystalline silicon thin-film transistors (poly-Si TFTs) on flexible substrates using sputtered amorphous Si (a-Si) precursor films. The a-Si precursor films were deposited by using rf-magnetron sputtering system with argon-helium mixture gas to minimize the argon incorporation into the Si film. The a-Si films were laser annealed by using XeCl excimer laser and...

All graphene-based thin film transistors on flexible plastic substrates.

High-performance, flexible all graphene-based thin film transistor (TFT) was fabricated on plastic substrates using a graphene active layer, graphene oxide (GO) dielectrics, and graphene electrodes. The GO dielectrics exhibit a dielectric constant (3.1 at 77 K), low leakage current (17 mA/cm(2)), breakdown bias (1.5 × 10(6) V/cm), and good mechanical flexibility. Graphene-based TFTs showed a ho...